ipi06n03la, IPP06N03LA opti mos ? 2 power-transistor features ? ideal for high-frequency dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel - logic level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? superior thermal resistance ? 175 c operating temperature ? d v /d t rated ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 2) 50 a t c =100 c 50 pulsed drain current i d,pulse t c =25 c 3) 350 avalanche energy, single pulse e as i d =45 a, r gs =25 ? 225 mj reverse diode d v /d t d v /d t i d =50 a, v ds =20 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 83 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 1) j-std20 and jesd22 value v ds 25 v r ds(on),max 6.2 m ? i d 50 a product summary pg-to220-3-1 pg-to262-3-1 type package marking ipi06n03la pg-to262-3-1 06n03la IPP06N03LA pg-to200-3-1 06n03la rev. 1.91 page 1 2008-04-29
ipi06n03la, IPP06N03LA parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.8 k/w smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 25 - - v gate threshold voltage v gs(th) v ds = v gs , i d =40 a 1.2 1.6 2 zero gate voltage drain current i dss v ds =25 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =25 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =30 a - 7.9 9.9 m ? v gs =10 v, i d =30 a - 5.2 6.2 gate resistance r g - 1.2 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30 a 29 58 - s 2) current is limited by bondwire; with an r thjc =1.8 k/w the chi p is able to carr y 91 3) see figure 3 4) t j,max =150 c and duty cycle d <0.25 for v gs <-5 v 5) device on 40 mm x 40 mm x 1.5 mm epo x y p c b fr4 wi t h 6 cm 2 (o n e l aye r , 7 0 values rev. 1.91 page 2 2008-04-29
ipi06n03la, IPP06N03LA parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2093 2653 pf output capacitance c oss - 800 1064 reverse transfer capacitance c rss - 98 147 turn-on delay time t d(on) -1116ns rise time t r -3038 turn-off delay time t d(off) -3045 fall time t f - 4.4 6.6 gate char g e characteristics 6) gate to source charge q gs - 6.7 9.0 nc gate charge at threshold q g(th) - 3.3 4.2 gate to drain charge q gd - 4.6 6.9 switching charge q sw - 8.0 11 gate charge total q g -1722 gate plateau voltage v plateau - 3.2 - v gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 5 v -1519nc output charge q oss v dd =15 v, v gs =0 v -1722 reverse diode diode continous forward current i s - - 50 a diode pulse current i s,pulse - - 350 diode forward voltage v sd v gs =0 v, i f =50 a, t j =25 c - 0.94 1.2 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 10 nc 6) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =25 a, r g =2.7 ? v dd =15 v, i d =25 a, v gs =0 to 5 v rev. 1.91 page 3 2008-04-29
ipi06n03la, IPP06N03LA 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.01 0.1 1 10 0 0 0 0 0 0 1 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 70 80 90 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 0 50 100 150 200 t c [c] i d [a] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 rev. 1.91 page 4 2008-04-29
ipi06n03la, IPP06N03LA 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3 v 3.2 v 3.5 v 3.8 v 4.1 v 4.5 v 10 v 0 5 10 15 20 25 0 20406080100 i d [a] r ds(on) [m ? ] 25 c 175 c 0 10 20 30 40 50 60 70 80 90 100 012345 v gs [v] i d [a] 0 10 20 30 40 50 60 70 80 90 100 0 20406080 i d [a] g fs [s] 2.8 v 3 v 3.2 v 3.5 v 3.8 v 4.1 v 4.5 v 10 v 0 10 20 30 40 50 60 70 80 90 100 0123 v ds [v] i d [a] rev. 1.91 page 5 2008-04-29
ipi06n03la, IPP06N03LA 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 1 2 3 4 5 6 7 8 9 10 11 12 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 40 a 400 a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 100 1000 10000 0 5 10 15 20 25 30 v ds [v] c [pf] 25 c 175 c 25c 98% 175c 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [a] rev. 1.91 page 6 2008-04-29
ipi06n03la, IPP06N03LA 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =25 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 5 v 15 v 20 v 0 2 4 6 8 10 12 0 10203040 q gate [nc] v gs [v] 20 21 22 23 24 25 26 27 28 29 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1 10 100 1000 t av [s] i av [a] rev. 1.91 page 7 2008-04-29
ipi06n03la, IPP06N03LA pg-to262-3-2: outline pg-to220-3-2: outline packaging rev. 1.91 page 8 2008-04-29
ipi06n03la, IPP06N03LA pg-to220-3-2: outline packaging rev. 1.91 page 9 2008-04-29
ipi06n03la, IPP06N03LA published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.91 page 10 2008-04-29
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